| PART |
Description |
Maker |
| V826632B24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V826632G24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V826516B04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
32Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x8 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
Hynix Semiconductor
http://
|
| HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
| NT256D64S88B1G NT512D64S8HB0G NT512D64S8HB0G-75B N |
184 pin Unbuffered DDR DIMM
|
ETC[ETC]
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 |
512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
http://
ELPIDA MEMORY INC
|
| VL-MM8-1EBN |
1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN
|
List of Unclassifed Manufacturers
|
| HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM
128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
